当前位置:首页 > 模拟 > 模拟
[导读]Imec Demonstrates World’s First III-V FinFET Devices Monolithically Integrated on 300mm Silicon Wafers Technology Achievement Marks Significant Step Towards Monolithic Heterogeneous Integration an

Imec Demonstrates World’s First III-V FinFET Devices Monolithically Integrated on 300mm Silicon Wafers

Technology Achievement Marks Significant Step Towards Monolithic Heterogeneous Integration and Non-silicon Devices.

Leuven, November 4, 2013—Imec, a leading nanoelectronics research center, announced today that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers, through a unique silicon fin replacement process. The achievement illustrates progress toward 300mm and future 450mm high-volume wafer manufacturing of advanced heterogeneous CMOS devices, monolithically integrating high-density compound semiconductors on silicon. The breakthrough not only enables continual CMOS scaling down to 7nm and below, but also enables new heterogeneous system opportunities in hybrid CMOS-RF and CMOS-optoelectronics.

“To our knowledge, this is the world’s first functioning CMOS compatible IIIV FinFET device processed on 300mm wafers,” stated An Steegen, senior vice president core CMOS at imec. “This is an exciting accomplishment, demonstrating the technology as a viable next-generation alternative for the current state-of-the-art Si-based FinFET technology in high volume production.”

The proliferation of smart mobile devices and the ever growing user expectations for bandwidth and connectivity, will drive the continual need for software and hardware advancements that extend from networks to data servers and mobile gadgets. At the core of the hardware will be new process technologies that allow for more power-efficient CMOS transistors and increased integration, enabling a higher level of functionality. This prompts process technologies that enable heterogeneous devices spanning operating ranges for targeted circuits, maximizing the system performance.

Aaron Thean, director of the Logic R&D at imec commented: “During the last decade, transistor scaling has been marked by several leaps in process technologies to provide performance and power improvements. The replacement of poly-silicon gate by high-k metal-gate in 45nm CMOS technology in 2007 represented a major inflection in new material integration for the transistor. The ability to combine scaled non-silicon and silicon devices might be the next dramatic transistor face-lift, breaking almost 50 years of all-silicon reign over digital CMOS. This work represents an important enabling step towards this new paradigm.”

At the finest grain, co-integration of high-density heterogeneous transistors has been challenged by the ability to combine disparate materials and structures while maintaining low enough complexity and defectivity. Imec’s breakthrough process selectively replaces silicon fins with indium gallium arsenide (InGaAs) and indium phospide (InP), accommodating close to eight percent of atomic lattice mismatch. The new technique is based on aspect-ratio trapping of crystal defects, trench structure, and epitaxial process innovations. The resulting III-V integrated on silicon FinFET device shows an excellent performance.

Imec’s research into next-generation FinFETs is performed as part of imec’s core CMOS program, in cooperation with imec’s key partners including Intel, Samsung, TSMC, Globalfoundries, Micron, SK Hynix, Toshiba, Panasonic, Sony, Qualcomm, Altera, Fujitsu, nVidia, and Xilinx.







本站声明: 本文章由作者或相关机构授权发布,目的在于传递更多信息,并不代表本站赞同其观点,本站亦不保证或承诺内容真实性等。需要转载请联系该专栏作者,如若文章内容侵犯您的权益,请及时联系本站删除。
换一批
延伸阅读

LED驱动电源的输入包括高压工频交流(即市电)、低压直流、高压直流、低压高频交流(如电子变压器的输出)等。

关键字: 驱动电源

在工业自动化蓬勃发展的当下,工业电机作为核心动力设备,其驱动电源的性能直接关系到整个系统的稳定性和可靠性。其中,反电动势抑制与过流保护是驱动电源设计中至关重要的两个环节,集成化方案的设计成为提升电机驱动性能的关键。

关键字: 工业电机 驱动电源

LED 驱动电源作为 LED 照明系统的 “心脏”,其稳定性直接决定了整个照明设备的使用寿命。然而,在实际应用中,LED 驱动电源易损坏的问题却十分常见,不仅增加了维护成本,还影响了用户体验。要解决这一问题,需从设计、生...

关键字: 驱动电源 照明系统 散热

根据LED驱动电源的公式,电感内电流波动大小和电感值成反比,输出纹波和输出电容值成反比。所以加大电感值和输出电容值可以减小纹波。

关键字: LED 设计 驱动电源

电动汽车(EV)作为新能源汽车的重要代表,正逐渐成为全球汽车产业的重要发展方向。电动汽车的核心技术之一是电机驱动控制系统,而绝缘栅双极型晶体管(IGBT)作为电机驱动系统中的关键元件,其性能直接影响到电动汽车的动力性能和...

关键字: 电动汽车 新能源 驱动电源

在现代城市建设中,街道及停车场照明作为基础设施的重要组成部分,其质量和效率直接关系到城市的公共安全、居民生活质量和能源利用效率。随着科技的进步,高亮度白光发光二极管(LED)因其独特的优势逐渐取代传统光源,成为大功率区域...

关键字: 发光二极管 驱动电源 LED

LED通用照明设计工程师会遇到许多挑战,如功率密度、功率因数校正(PFC)、空间受限和可靠性等。

关键字: LED 驱动电源 功率因数校正

在LED照明技术日益普及的今天,LED驱动电源的电磁干扰(EMI)问题成为了一个不可忽视的挑战。电磁干扰不仅会影响LED灯具的正常工作,还可能对周围电子设备造成不利影响,甚至引发系统故障。因此,采取有效的硬件措施来解决L...

关键字: LED照明技术 电磁干扰 驱动电源

开关电源具有效率高的特性,而且开关电源的变压器体积比串联稳压型电源的要小得多,电源电路比较整洁,整机重量也有所下降,所以,现在的LED驱动电源

关键字: LED 驱动电源 开关电源

LED驱动电源是把电源供应转换为特定的电压电流以驱动LED发光的电压转换器,通常情况下:LED驱动电源的输入包括高压工频交流(即市电)、低压直流、高压直流、低压高频交流(如电子变压器的输出)等。

关键字: LED 隧道灯 驱动电源
关闭