意法半导体250W MasterGaN参考设计快速跟踪紧凑、高效的工业电源

250W MasterGaN reference design fast-tracks compact, efficient industrial power supplies

250W MasterGaN参考设计快速跟踪紧凑、高效的工业电源

Accelerating the design of gallium-nitride (GaN) power supplies (PSUs) that deliver superior efficiency and power density, STMicroelectronics has launched the EVL250WMG1L resonant-converter reference design based on the MasterGaN1L System-in-Package (SiP).

为提供卓越的效率和功率密度，意法半导体加快了氮化镓 (GaN) 电源 (PSU) 的设计进程，推出了基于MasterGaN1L系统级封装 (SiP) 的EVL250WMG1L谐振转换器参考设计。

ST’s MasterGaN SiPs combine GaN power transistors with gate drivers specially optimized to ensure fast and perfectly controlled switching. Using these SiPs in place of an equivalent network of discrete components helps maximize performance and reliability while also accelerating design and saving PCB space.

意法半导体的MasterGaN-SiPs将GaN功率晶体管与经特殊优化的栅极驱动器相结合，以确保开关快速且受控。使用此类SiP代替分立器件的等效网络有助于增强性能和可靠性，同时加速设计并节省PCB空间。

The new reference design targets industrial applications where space is limited and efficiency is critical. Combining the MasterGaN1L, which contains two 650V 150mΩ GaN FETs, with ST’s L6599A resonant controller, the PSU achieves peak efficiency over 94% and operates without heatsinks on the primary side. Also leveraging ST’s SRK2001A synchronous-rectification controller, the unit has a compact overall footprint of 80mm x 50mm and outstanding power density of 34 Watts per cubic inch (W/inch^3).

全新的参考设计针对的是空间有限但效率至关重要的工业应用。结合MasterGaN1L（含两个650V 150m GaN-FET，采用意法半导体的L6599A谐振控制器），PSU的峰值效率超过94%，且能在初级侧无散热器的情况下运行。该装置还利用了意法半导体的SRK2001A同步整流控制器，80mm x 50mm的整体尺寸十分紧凑，功率密度高达34 W/inch^3。

The PSU can deliver up to 10A output current, equivalent to 250W at 24Vdc, while also having standby current consumption below 1µA for excellent energy saving. Protection features built into the L6599A and SRK2001A ensure resilience against overcurrent, short-circuit and overvoltage, while input-voltage monitoring ensures correct startup and provides under-voltage lockout.

PSU可提供高达10A的输出电流，相当于24Vdc下的250W，同时待机电流消耗低于1µA，拥有出色的节能效果。L6599A和SRK2001A内置的保护功能可确保对过电流、短路和过电压的弹性保护，而输入电压监测则可确保启动正确并提供欠压锁定功能。

Key features

关键特性

High efficiency and compact solution for DC-DC conversion using MasterGaN1L

紧凑的高效率解决方案，面向使用MasterGaN1L转换

Output voltage: 24 V

输出电压：24 V

Output power: up to 250 W

输出功率：高达250 W

Nominal input voltage: 400 V +/- 10%

标称输入电压：400 V +/- 10%

Efficiency: > 92%

效率：> 92%

Outputs protected against short-circuit and overcurrent

输出具有短路和过电流保护

Input voltage monitor for correct sequencing as D2D converter, and brown-out protection

输入电压监控用于管理正确的D2D转换器序列，并具有欠压保护功能

Board size: 80 x 50 (W x H) mm. Maximum components height: 30 mm

板子尺寸：80 x 50 (W x H) mm。最大组件高度：30 mm

WEEE and RoHS compliant

符合WEEE和RoHS标准

The EVL250WMG1L is available now, fully built and ready for evaluation, for $250.00. Comprehensive related documentation is published on the product page to help system designers accelerate their GaN power projects.

EVL250WMG1L现已上市，整套预装系统可直接进行测试验证，每件售价250.00美元。产品页面上发布了全面的相关文档，以帮助系统设计者加快GaN电源项目。