意法半导体使用新型STPOWER MDmesh DM9超结硅MOSFET改进汽车电源设计

Boost automotive power designs with new STPOWER MDmesh DM9 super-junction silicon MOSFETs

使用新型STPOWER MDmesh DM9超结硅MOSFET改进汽车电源设计

STPOWER MDmesh DM9 AG automotive-grade 600V/650V super-junction MOSFETs deliver high efficiency and ruggedness for on-board chargers and DC/DC converters in both hard- and soft-switching topologies.

针对硬开关和软开关拓扑中的车载充电器和DC/DC转换器，STPOWER MDmesh DM9 AG车规级600V/650V超结MOSFET提供了出色的效率和稳健性。

The standout feature of the MDmesh DM9 AG series is its RDS(on) per die area coupled with a minimal gate charge. This combination leads to lower energy losses and superior switching performance, setting a new benchmark figure of merit. The latest technology in the series ensures a tighter gate-source threshold voltage (VGS(th)) spread, which sharpens the switching capabilities of the MOSFETs, resulting in lower turn-on and turn-off losses.

MDmesh DM9 AG系列的突出特点是理想的单位晶片面积RDS(on) 和较小的栅极电荷。这一优势带来了更低的能量损失和卓越的开关性能，树立了全新的基准品质因数。该系列所运用的新技术带来了更加紧密的栅源阈值电压 (VGS(th)) 分布，由此提高了MOSFET的开关能力，并降低了导通和关断损耗。

Moreover, these devices offer improved body-diode reverse recovery characteristics, thanks to a new optimized process that not only enhances the reverse recovery but also increases the MOSFETs' overall ruggedness. The diode's low reverse-recovery charge (Qrr) and fast recovery time (trr) position the MDmesh DM9 AG series as an ideal choice for phase-shift zero-voltage switching topologies that require the highest levels of efficiency.

此外，得益于全新的优化工艺，该系列器件提供了更佳的体二极管反向恢复特性——不仅增强了反向恢复，还提高了MOSFET的整体稳健性。二极管的低反向恢复电荷 (Qrr) 和快速恢复时间 (trr) 使MDmesh DM9 AG系列成为需要高效率的相移零电压开关拓扑的理想选择。

The series also provides a variety of through-hole and surface-mount packages, enabling designers to achieve a compact form factor without compromising on power density and system reliability. The TO-247 LL (long-lead) package is a popular through-hole option that facilitates easy integration into existing designs, while surface-mount packages like the H2PAK-2 (2 leads) and H2PAK-7 (7 leads) are tailored for efficient bottom-side cooling when used with thermal substrates or PCBs equipped with thermal vias. Additionally, the HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are available for those seeking alternative cooling solutions.

该系列还提供各种通孔和表面安装封装，使设计者能够在不影响功率密度和系统可靠性的情况下，实现紧凑的外形尺寸。TO-247 LL（长引线）封装是一种流行的通孔选项，有助于实现现有设计的轻松集成，而H2PAK-2（2引线）和H2PAK-7（7引线）等表面贴装封装则专为高效底侧冷却定制，用于搭配热基板或PCB（设有热通孔）使用。此外，对于寻求替代性冷却解决方案的用户，也可以选择HU3PAK和ACEPACK™ SMIT顶部冷却表面贴装封装。

The first device to be introduced in the STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device that showcases a 76mΩ typical RDS(on) in an H2PAK-2 package.

STPOWER MDmesh DM9 AG系列推出的首款器件是STH60N099DM9-2AG。这是一款符合27A AEC-Q101标准的N沟道600V器件，采用H2PAK-2封装，具有76mΩ的典型RDS(on)。

ST is committed to expanding this family to include a full range of devices, covering a broad array of current ratings and on-resistances from 23mΩ to 150mΩ, ensuring that there's a suitable component for a wide variety of automotive power applications.

意法半导体致力于将该系列扩展至全器件系列，涵盖从23mΩ到150mΩ的各种电流额定值和导通电阻，确保相关组件能够适应各种汽车电源应用。