SK海力士开始量产64GB 16纳米NAND闪存

元器件交易网讯 11月20日消息，根据韩国内存芯片制造商SK海力士消息，公司已经开始大规模批量生产64GB 16nm MLC NAND闪存芯片。

公司表示，SK海力士的16nm NAND闪存已于6月进入第一版本的批量生产，最近已开始第二版本的大规模生产。由于芯片尺寸更小，这样更具成本竞争力。

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NAND路线图汇总

公司指出，SK海力士还根据16nm 64Gb MLC的规格和耐力开发出128GB（16GB）MLC芯片，定于2014年初批量生产。

公司表示，一般来说，越薄的工艺技术能更有效地缩小单元之间更频繁的干扰，但SK海力士应用的最新气隙技术（Air-Gap），克服了单元之间的干扰。气隙技术使用真空孔在电路之间构建绝缘屏蔽，而不是用化学物质隔离。（元器件交易网郭路平 译）

外文：

SK Hynix starts full-scale mass production of 16nm NAND flash

SK Hynix has started full-scale mass production of 16nm 64-gigabit (Gb) MLC NAND flash chips, according to the South Korea-based memory chipmaker.

SK Hynix entered mass production of its first-version 16nm NAND flash in June, and has recently started to mass produce the second version which is more cost competitive due to its smaller chip size, the company said.

SK Hynix has also developed 128Gb (16-gigabytes, 16GB) MLC chips based on the specification and endurance of 16nm 64Gb MLC, with mass production scheduled for early 2014, the company noted.

Generally, the thinner process technology shrinks the more frequent interferences among cells occur, but SK Hynix applied up-to-date Air-Gap technology to overcome the interferences among the cells, the company indicated. The Air-Gap technology builds insulation shield with vacuum holes between circuits not with insulating substances.

"After the company developed and started to mass produce the industry's thinnest 16nm product then now prepared high density NAND flash product portfolio thanks to the development of 16nm 128Gb MLC," said Jin Woong Kim, senior VP and head of SK Hynix' flash tech development.